The Model 2003BT charge sensitive FET input preamp is designed for optimum performance with Silicon detectors such as the Passivated Implanted Planar Silicon (PIPS®) detectors and legacy Silicon Surface Barrier (SSB) detectors.
The Features
- Low noise design: less than 2.0 keV (Si) at 0 pF
- High energy rate capability: up to 2 x 106 MeV per second
- FET input, diode protected
- Independent energy and fast timing outputs
- Fast rise time less than 3 ns at 0 pF
- Small size
- Capable of operating in a vacuum chamber