Bangkhunprom , Phranakorn Bangkok, Thailand

2004

Semiconductor Detector Preamplifier

The Model 2004 charge sensitive FET input preamplifier was designed for use with both low and high capacitance semiconductor detectors.

The Features

  • Low noise design: less than 2.8 keV (Si) at 0 pF
  • High charge rate capability: up to 4.5 X 106 MeV/sec
  • FET input, diode protected
  • Pole/zero select or defeat
  • High voltage operation up to ±2000 V dc